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| NCV8402 Self-Protected Low Side Driver with Temperature and Current Limit NCV8402 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. Features http://onsemi.com V(BR)DSS (Clamped) 42 V RDS(ON) TYP 165 mW @ 10 V ID MAX 2.0 A* * * * * * * * * * * * Short-Circuit Protection Thermal Shutdown with Automatic Restart Overvoltage Protection Integrated Clamp for Inductive Switching ESD Protection dV/dt Robustness Analog Drive Capability (Logic Level Input) RoHs Compliant AEC-Q101 Qualified NCV Prefix for Automotive and Other Applications Requiring Site and Change Control These are Pb-Free Devices *Max current limit value is dependent on input condition. Drain Overvoltage Protection Gate Input ESD Protection Temperature Limit Current Limit Current Sense Typical Applications Source * Switch a Variety of Resistive, Inductive and Capacitive Loads * Can Replace Electromechanical Relays and Discrete Circuits * Automotive / Industrial 4 SOT-223 CASE 318E STYLE 3 MARKING DIAGRAM DRAIN 4 AYW 8402 G 1 G 2 3 1 2 3 SOURCE GATE DRAIN A = Assembly Location Y = Year W = Work Week 8402 = Specific Device Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NCV8402STT1G NCV8402STT3G Package SOT-223 (Pb-Free) SOT-223 (Pb-Free) Shipping 1000/Tape & Reel 4000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 October, 2009 - Rev. 6 1 Publication Order Number: NCV8402/D NCV8402 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Internally Clamped Drain-to-Gate Voltage Internally Clamped Gate-to-Source Voltage Continuous Drain Current Power Dissipation @ TA = 25C (Note 1) @ TA = 25C (Note 2) @ TT = 25C (Note 1) Junction-to-Ambient Steady State (Note 1) Junction-to-Ambient Steady State (Note 2) Junction-to-Tab Steady State (Note 1) (RG = 1.0 MW) Symbol VDSS VDGR VGS ID PD Value 42 42 "14 1.1 1.7 8.9 114 72 14 150 87 -40 to 150 -55 to 150 Unit V V V W Internally Limited Thermal Resistance RqJA RqJA RqJT EAS VLD TJ Tstg C/W Single Pulse Drain-to-Source Avalanche Energy (VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 W) Load Dump Voltage Operating Junction Temperature Storage Temperature (VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms) mJ V C C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06 thick). 2. Surface-mounted onto 2 sq. FR4 board (1 sq., 1 oz. Cu, 0.06 thick). + ID DRAIN IG + GATE VDS VGS SOURCE - - Figure 1. Voltage and Current Convention http://onsemi.com 2 NCV8402 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) Zero Gate Voltage Drain Current VGS = 0 V, ID = 10 mA, TJ = 25C VGS = 0 V, ID = 10 mA, TJ = 150C (Note 5) VGS = 0 V, VDS = 32 V, TJ = 25C VGS = 0 V, VDS = 32 V, TJ = 150C (Note 5) Gate Input Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient Static Drain-to-Source On-Resistance VGS = 10 V, ID = 1.7 A, TJ = 25C VGS = 10 V, ID = 1.7 A, TJ = 150C (Note 5) VGS = 5.0 V, ID = 1.7 A, TJ = 25C VGS = 5.0 V, ID = 1.7 A, TJ = 150C (Note 5) VGS = 5.0 V, ID = 0.5 A, TJ = 25C VGS = 5.0 V, ID = 0.5 A, TJ = 150C (Note 5) Source-Drain Forward On Voltage SWITCHING CHARACTERISTICS (Note 5) Turn-ON Time (10% VIN to 90% ID) Turn-OFF Time (90% VIN to 10% ID) Slew-Rate ON (70% VDS to 50% VDS) Slew-Rate OFF (50% VDS to 70% VDS) Current Limit VGS = 10 V, VDD = 12 V ID = 2.5 A, RL = 4.7 W VGS = 10 V, VDD = 12 V, RL = 4.7 W VDS = 10 V, VGS = 5.0 V, TJ = 25C VDS = 10 V, VGS = 5.0 V, TJ = 150C (Note 5) VDS = 10 V, VGS = 10 V, TJ = 25C VDS = 10 V, VGS = 10 V, TJ = 150C (Note 5) Temperature Limit (Turn-off) Thermal Hysteresis Temperature Limit (Turn-off) Thermal Hysteresis GATE INPUT CHARACTERISTICS (Note 5) Device ON Gate Input Current Current Limit Gate Input Current Thermal Limit Fault Gate Input Current VGS = 5 V ID = 1.0 A VGS = 10 V ID = 1.0 A VGS = 5 V, VDS = 10 V VGS = 10 V, VDS = 10 V VGS = 5 V, VDS = 10 V VGS = 10 V, VDS = 10 V ESD ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (Note 5) Electro-Static Discharge Capability Human Body Model (HBM) Machine Model (MM) 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Fault conditions are viewed as beyond the normal operating range of the part. 5. Not subject to production testing. ESD 4000 400 V IGTL IGCL IGON 50 400 0.05 0.4 0.15 0.7 mA mA mA VGS = 5.0 V (Note 5) VGS = 5.0 V VGS = 10 V (Note 5) VGS = 10 V TLIM(off) DTLIM(on) TLIM(off) DTLIM(on) 150 tON tOFF -dVDS/dtON dVDS/dtOFF ILIM 3.7 2.3 4.2 2.7 150 25 120 0.8 0.3 4.3 3.0 4.8 3.6 175 15 165 15 185 5.0 3.7 5.4 4.5 200 C A V/ms ms VGS = 0 V, IS = 7.0 A VSD VGS = VDS, ID = 150 mA VGS(th) VGS(th)/TJ RDS(on) 1.3 1.8 4.0 165 305 195 360 190 350 1.0 200 400 230 460 230 460 V 2.2 V -mV/C mW VDS = 0 V, VGS = 5.0 V IGSSF IDSS V(BR)DSS 42 40 46 45 0.25 1.1 50 55 55 4.0 20 100 mA mA V Test Condition Symbol Min Typ Max Unit SELF PROTECTION CHARACTERISTICS (TJ = 25C unless otherwise noted) (Note 4) http://onsemi.com 3 NCV8402 TYPICAL PERFORMANCE CURVES 10 1000 Emax (mJ) IL(max) (A) TJstart = 25C 100 TJstart = 25C TJstart = 150C 1 10 10 10 TJstart = 150C L (mH) 100 L (mH) 100 Figure 2. Single Pulse Maximum Switch-off Current vs. Load Inductance 10 1000 Figure 3. Single Pulse Maximum Switching Energy vs. Load Inductance TJstart = 25C Emax (mJ) IL(max) (A) TJstart = 25C 100 TJstart = 150C 1 TJstart = 150C 0.1 1 TIME IN CLAMP (ms) 10 10 1 TIME IN CLAMP (ms) 10 Figure 4. Single Pulse Maximum Inductive Switch-off Current vs. Time in Clamp 8 7 6 5 ID (A) 4 3 2 1 0 0 1 2 VDS (V) 3 3V 1 VGS = 2.5 V 4 5 0 1 5 Figure 5. Single Pulse Maximum Inductive Switching Energy vs. Time in Clamp TA = 25C 8V 10 V 6V 5V 4V 3.5 V ID (A) VDS = 10 V 4 3 25C 100C -40C 150C 2 2 3 VGS (V) 4 5 Figure 6. On-state Output Characteristics Figure 7. Transfer Characteristics http://onsemi.com 4 NCV8402 TYPICAL PERFORMANCE CURVES 400 150C, ID = 0.5 A 300 300 RDS(on) (mW) 150C, ID = 1.7 A RDS(on) (mW) 250 200 150 100 50 0.2 -40C, VGS = 5 V -40C, VGS = 10 V 7 VGS (V) 8 9 10 0.4 0.6 0.8 1 1.2 ID (A) 1.4 1.6 1.8 2 100C, ID = 1.7 A 25C, ID = 0.5 A 150C, VGS = 10 V 100C, VGS = 5 V 25C, VGS = 5 V 25C, VGS = 10 V 100C, VGS = 10 V 350 150C, VGS = 5 V 200 100C, ID = 0.5 A 25C, ID = 1.7 A 100 -40C, ID = 1.7 A 0 4 5 6 -40C, ID = 0.5 A Figure 8. RDS(on) vs. Gate-Source Voltage 2 1.75 1.5 ID = 1.7 A 8 7 VGS = 5 V ILIM (A) 6 5 Figure 9. RDS(on) vs. Drain Current -40C RDS(on) (NORMIALZIZED) 25C 1.25 1 VGS = 10 V 100C 4 3 2 VDS = 10 V 5 6 7 VGS (V) 8 9 10 150C 0.75 0.5 -40 -20 0 20 40 60 T (C) 80 100 120 140 Figure 10. Normalized RDS(on) vs. Temperature Figure 11. Current Limit vs. Gate-Source Voltage 10 VGS = 0 V 1 150C 8 7 6 ILIM (A) 5 4 3 VDS = 10 V 2 -40 -20 0 VGS = 10 V IDSS (mA) 0.1 100C 0.01 25C 0.001 -40C VGS = 5 V 20 40 60 80 100 120 140 0.0001 10 15 20 25 VDS (V) 30 35 40 TJ (C) Figure 12. Current Limit vs. Junction Temperature Figure 13. Drain-to-Source Leakage Current http://onsemi.com 5 NCV8402 TYPICAL PERFORMANCE CURVES 1.2 1.1 1 VSD (V) 0.9 0.8 0.7 0.6 -40 ID = 150 mA VGS = VDS 1.1 1 0.9 0.8 0.7 150C 0.6 0.5 VGS = 0 V 1 2 3 4 5 IS (A) 6 7 8 9 10 -40C 25C 100C NORMALIZED VGS(th) (V) -20 0 20 40 60 80 100 120 140 T (C) Figure 14. Normalized Threshold Voltage vs. Temperature 200 DRAIN-SOURCE VOLTAGE SLOPE (V/ms) ID = 2.5 A VDD = 12 V RG = 0 W 1 0.8 0.6 0.4 0.2 0 Figure 15. Source-Drain Diode Forward Characteristics 150 TIME (ms) ID = 2.5 A VDD = 12 V RG = 0 W -dVDS/dt(on) 100 td(off) tr dVDS/dt(off) 50 tf td(on) 0 3 4 5 Figure 16. Resistive Load Switching Time vs. Gate-Source Voltage 6 7 VGS (V) 8 9 10 3 4 5 Figure 17. Resistive Load Switching Drain-Source Voltage Slope vs. Gate-Source Voltage 1 DRAIN-SOURCE VOLTAGE SLOPE (V/ms) 6 7 VGS (V) 8 9 10 100 ID = 2.5 A VDD = 12 V 75 TIME (ms) tr, (VGS = 5 V) tf, (VGS = 10 V) td(off), (VGS = 5 V) 25 tr, (VGS = 10 V) td(on), (VGS = 5 V) td(on), (VGS = 10 V) 800 1200 1600 2000 RG (W) tf, (VGS = 5 V) td(off), (VGS = 10 V) 0.8 0.6 0.4 0.2 0 -dVDS/dt(on), VGS = 10 V 50 dVDS/dt(off), VGS = 5 V -dVDS/dt(on), VGS = 5 V dVDS/dt(off), VGS = 10 V ID = 2.5 A VDD = 12 V 1500 2000 0 0 400 0 500 Figure 18. Resistive Load Switching Time vs. Gate Resistance Figure 19. Drain-Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance 1000 RG (W) http://onsemi.com 6 NCV8402 TYPICAL PERFORMANCE CURVES 100 50% Duty Cycle 10 20% 10% 5% 2% 1 1% 0.1 Single Pulse RqJA 788 mm2 C/W 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH (sec) Figure 20. Transient Thermal Resistance http://onsemi.com 7 NCV8402 TEST CIRCUITS AND WAVEFORMS RL VIN RG D G DUT S + VDD - IDS Figure 21. Resistive Load Switching Test Circuit 90% VIN 10% td(ON) tr td(OFF) tf 90% IDS 10% Figure 22. Resistive Load Switching Waveforms http://onsemi.com 8 NCV8402 TEST CIRCUITS AND WAVEFORMS L VDS VIN RG D G DUT S VDD + - tp IDS Figure 23. Inductive Load Switching Test Circuit 5V VIN Tav Tp V(BR)DSS Ipk 0V VDS VDD VDS(on) IDS 0 Figure 24. Inductive Load Switching Waveforms http://onsemi.com 9 NCV8402 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE M D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A A1 b b1 c D E e e1 L1 HE MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10 4 HE E 1 2 3 e1 b e A q L1 C q 0.08 (0003) A1 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 10 NCV8402/D |
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